Phase transitions and incommensurability in the layered semiconductor TlInS2--an NMR study.
Identifieur interne : 000B43 ( Main/Exploration ); précédent : 000B42; suivant : 000B44Phase transitions and incommensurability in the layered semiconductor TlInS2--an NMR study.
Auteurs : RBID : pubmed:22407065English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Organometallic Compounds, Sulfides, Thallium.
- Crystallography, X-Ray, Magnetic Resonance Spectroscopy, Models, Molecular, Phase Transition, Semiconductors, Temperature, Thermodynamics.
Abstract
We report on the first NMR study of powder and single crystal samples of thallium indium sulfide, TlInS(2). The crystal under study is a pure single-layer TlInS(2) polytype. Our findings show that transformation from the high temperature paraelectric phase to the low temperature ferroelectric phase occurs via an incommensurate phase that exists in the temperature range from T(c) = 192 K to T(i) = 205 K. On approaching the phase transition at T(i) from above, the crystal exhibits a soft mode behavior. A discrepancy in the literature data on the phase transitions in TlInS(2) is discussed and ascribed to polytypism of the TlInS(2) crystals.
DOI: 10.1088/0953-8984/24/13/135901
PubMed: 22407065
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Phase transitions and incommensurability in the layered semiconductor TlInS2--an NMR study.</title><author><name sortKey="Panich, A M" uniqKey="Panich A">A M Panich</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Ben-Gurion University of the Negev, PO Box 653, Be'er Sheva 84105, Israel. pan@bgu.ac.il</nlm:affiliation><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Physics, Ben-Gurion University of the Negev, PO Box 653, Be'er Sheva 84105</wicri:regionArea></affiliation></author><author><name sortKey="Mogilyansky, D" uniqKey="Mogilyansky D">D Mogilyansky</name></author><author><name sortKey="Sardarly, R M" uniqKey="Sardarly R">R M Sardarly</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1088/0953-8984/24/13/135901</idno><idno type="RBID">pubmed:22407065</idno><idno type="pmid">22407065</idno><idno type="wicri:Area/Main/Corpus">000E42</idno><idno type="wicri:Area/Main/Curation">000E42</idno><idno type="wicri:Area/Main/Exploration">000B43</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystallography, X-Ray</term><term>Indium (chemistry)</term><term>Magnetic Resonance Spectroscopy</term><term>Models, Molecular</term><term>Organometallic Compounds (chemistry)</term><term>Phase Transition</term><term>Semiconductors</term><term>Sulfides (chemistry)</term><term>Temperature</term><term>Thallium (chemistry)</term><term>Thermodynamics</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term><term>Organometallic Compounds</term><term>Sulfides</term><term>Thallium</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Crystallography, X-Ray</term><term>Magnetic Resonance Spectroscopy</term><term>Models, Molecular</term><term>Phase Transition</term><term>Semiconductors</term><term>Temperature</term><term>Thermodynamics</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the first NMR study of powder and single crystal samples of thallium indium sulfide, TlInS(2). The crystal under study is a pure single-layer TlInS(2) polytype. Our findings show that transformation from the high temperature paraelectric phase to the low temperature ferroelectric phase occurs via an incommensurate phase that exists in the temperature range from T(c) = 192 K to T(i) = 205 K. On approaching the phase transition at T(i) from above, the crystal exhibits a soft mode behavior. A discrepancy in the literature data on the phase transitions in TlInS(2) is discussed and ascribed to polytypism of the TlInS(2) crystals.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22407065</PMID><DateCreated><Year>2012</Year><Month>03</Month><Day>15</Day></DateCreated><DateCompleted><Year>2012</Year><Month>07</Month><Day>10</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-648X</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>13</Issue><PubDate><Year>2012</Year><Month>Apr</Month><Day>4</Day></PubDate></JournalIssue><Title>Journal of physics. Condensed matter : an Institute of Physics journal</Title><ISOAbbreviation>J Phys Condens Matter</ISOAbbreviation></Journal><ArticleTitle>Phase transitions and incommensurability in the layered semiconductor TlInS2--an NMR study.</ArticleTitle><Pagination><MedlinePgn>135901</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0953-8984/24/13/135901</ELocationID><Abstract><AbstractText>We report on the first NMR study of powder and single crystal samples of thallium indium sulfide, TlInS(2). The crystal under study is a pure single-layer TlInS(2) polytype. Our findings show that transformation from the high temperature paraelectric phase to the low temperature ferroelectric phase occurs via an incommensurate phase that exists in the temperature range from T(c) = 192 K to T(i) = 205 K. On approaching the phase transition at T(i) from above, the crystal exhibits a soft mode behavior. A discrepancy in the literature data on the phase transitions in TlInS(2) is discussed and ascribed to polytypism of the TlInS(2) crystals.</AbstractText><CopyrightInformation>© 2012 IOP Publishing Ltd</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Panich</LastName><ForeName>A M</ForeName><Initials>AM</Initials><Affiliation>Department of Physics, Ben-Gurion University of the Negev, PO Box 653, Be'er Sheva 84105, Israel. pan@bgu.ac.il</Affiliation></Author><Author ValidYN="Y"><LastName>Mogilyansky</LastName><ForeName>D</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Sardarly</LastName><ForeName>R M</ForeName><Initials>RM</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>03</Month><Day>09</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>J Phys Condens Matter</MedlineTA><NlmUniqueID>101165248</NlmUniqueID><ISSNLinking>0953-8984</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Organometallic Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Sulfides</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>AD84R52XLF</RegistryNumber><NameOfSubstance>Thallium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Crystallography, X-Ray</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Magnetic Resonance Spectroscopy</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Models, Molecular</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Organometallic Compounds</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Phase Transition</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Sulfides</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Temperature</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Thallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Thermodynamics</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>3</Month><Day>09</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>3</Month><Day>13</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>3</Month><Day>13</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>7</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0953-8984/24/13/135901</ArticleId><ArticleId IdType="pubmed">22407065</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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